A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature

Abstract We demonstrate a 36 × gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with quadratic increase in dot count upon linear control lines. The is fabricated on an industrial 28 Si-MOS stack and shows 100% FET yield at cryogenic temperature. observe decreasing threshold voltage wider channel devices obtain normal distribution of pinch-off voltages nominally identical tunnel barriers probed over 1296 crossings. Macroscopically across the crossbar, we measure average 1.17 V standard deviation 46.8 mV, while local differences within each unit cell indicate 23.1 mV. These disorder potential landscape variations translate to 1.2 0.6 times measured charging energy, respectively. Such metrics provide means material device optimization serve as guidelines design large-scale architectures fault-tolerant semiconductor-based computing.